Document Type : Research Paper


1 Faculty of Electrical, Biomedical and Mechatronics Engineering, Qazvin Branch, Islamic Azad University, Qazvin, Iran

2 School of Electrical and computer Engineering, College of Engineering, University of Tehran, Tehran, Iran

3 Electrical Engineering Department, Amirkabir University of Technology, Tehran, Iran


In this paper, a novel LNA design based on improved noise cancellation technique in the frequency range of 27 to 31 presented The proposed LNA is suitable for millimeter wave 5G wireless communication. The first stage of this two-stage LNA is designed with noise cancelation approach to decrease the noise figure of the system. In order to improve the design method, we utilizes a negative feedback by implementing a couple inductor with a transformer connection. The negative feedback provides an acceptable input matching and control the gain to increase the band width. The cascode structure is used in the second stage for its higher gain and stability and better reverse isolation at millimeter wave frequency. Furthermore, an inductor is utilized to boost the gain with neutralizing the capacitance of node between two transistors in a cascode structure. The CMOS silicon on insulator (SOI) is utilized to provide a high level of integration and low power consumption with the minimum cost. The proposed LNA is designed with 130 nm CMOS technology and has 22.14 dB gain with 1.86 dB noise figure at 29 GHz. The 3-dB bandwidth of the designed LNA is 4 GHz (14%) and its DC power consumption is 33.4 mW. The IIP3 is -16dBm and input reflection coefficient is better than -10dBm in the frequency range of interest. The proposed LNA is simulated by ADS software.